Product Summary

The BUT12AF is a High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 plastic package. It is suitable for Converters, Inverters, Switching regulators and Motor control systems.

Parametrics

BUT12AF absolute maximum ratings: (1)VCESM collector-emitter peak voltage: 1000 V; (2)VCEO collector-emitter voltage open base: 450 V; (3)ICsat collector saturation current: 5A; (4)IC collector current (DC): 8A; (5)ICM collector current (peak value):20 A; (6)IB base current (DC): 4A; (7)IBM base current (peak value): 6A; (8)Ptot total power dissipation: 23 W; (9)Tstg storage temperature: -65 to +150℃; (10)Tj junction temperature: 150℃.

Diagrams

BUT12AF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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BUT12AF
BUT12AF

Other


Data Sheet

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Image Part No Mfg Description Data Sheet Download Pricing
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BUT100
BUT100

Other


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BUT11

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Data Sheet

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BUT11A

Fairchild Semiconductor

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Data Sheet

0-1: $0.71
1-25: $0.62
25-100: $0.52
100-250: $0.38
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BUT11A,127

NXP Semiconductors

Transistors Bipolar (BJT) BUT11A/SOT78/RAILH//

Data Sheet

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BUT11AF
BUT11AF

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Data Sheet

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BUT11AFTU
BUT11AFTU

Fairchild Semiconductor

Transistors Bipolar (BJT) NPN Si Transistor

Data Sheet

0-1: $0.58
1-25: $0.44
25-100: $0.41
100-250: $0.35