(China (Mainland))
Product Summary
The 2SB1132 is a Medium Power Transistor.
Parametrics
2SB1132 absolute maximum ratings: (1)Peak reverse voltage, VRM: 90V; (2)DC reverse voltage, VR: 80V; (3)Peak forward current, IFM: 225mA; (4)Mean rectifying current, IO: 100mA; (5)Surge current (1s), Isurge: 500mA; (6)Junction temperature, Tj: 125℃; (7)Storage temperature, Tstg: -55 to +125℃.
Features
2SB1132 features: (1)Low VCE(sat) = -0.2V (Typ.) (IC/IB = -500mA/-50mA); (2)Compliments 2SD1664/2SD1858.
Diagrams
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Pricing (USD) |
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 2SB1132 |
Other |
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Data Sheet |
Negotiable |
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2SB1132 FD5T100R |
Other |
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Data Sheet |
Negotiable |
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2SB1132 Q |
Other |
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Data Sheet |
Negotiable |
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2SB1132 R |
Other |
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Data Sheet |
Negotiable |
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2SB1132 T100 Q |
Other |
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Data Sheet |
Negotiable |
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2SB1132 T100 R |
Other |
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Data Sheet |
Negotiable |
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2SB1132T100P |
ROHM Semiconductor |
Transistors Bipolar (BJT) DVR PNP 32V 1A |
Data Sheet |
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2SB1132T100R |
ROHM Semiconductor |
Transistors Bipolar (BJT) PNP 32V 1A |
Data Sheet |
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