Product Summary

The BC337-25 is a NPN epitaxial silicon transistor.It is widely applied in switching and amplifier. The BC337-25 is suitable for AF-Driver stages and low power output stages.

Parametrics

BC337-25 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 50V; (2)Collector-Emitter Voltage, VCEO: 45V; (3)Emitter-Base Voltage, VEBO: 5V; (4)Collector Current (DC), IC: 800mA; (5)Collector Power Dissipation, PC: 625mW; (6)Junction Temperature, TJ: 150℃; (7)Storage Temperature, TSTG: -55 to 150℃.

Features

BC337-25 features: (1)Capable of 0.625Watts of Power Dissipation; (2)Collector-current 0.8A; (3)Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338); (4)Lead Free Finish/RoHS Compliant (P Suffix designates; (5)RoHS Compliant. See ordering information); (6)Epoxy meets UL 94 V-0 flammability rating; (7)Moisure Sensitivity Level 1.

Diagrams

BC337-25 Package Dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BC337-25
BC337-25

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Data Sheet

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Data Sheet

0-1: $0.33
1-10: $0.23
10-100: $0.11
100-250: $0.08
BC337-25-BULKS
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